Akgul, Funda AksoyAkgul, Guvenc2024-11-072024-11-072017978-0-7354-1483-90094-243Xhttps://doi.org/10.1063/1.4976471https://hdl.handle.net/11480/1381632nd International Physics Congress of Turkish-Physical-Society (TPS) -- SEP 06-09, 2016 -- Bodrum, TURKEYRecently, CuO has attracted much interest owing to its suitable material properties, inexpensive fabrication cost and potential applications for optoelectronic devices. In this study, CuO thin films were deposited on glass substrates using chemical bath deposition technique and post-deposition annealing effect on the properties of the prepared samples were investigated. p-n heterojunction solar cells were then constructed by coating of p-type CuO films onto the vertically well aligned n-type Si nanowires synthesized through MACE method. Photovoltaic performance of the fabricated devices were determined with current voltage (I-V) measurements under AM 1.5 G illumination. The optimal short-circuit current density, open-circuit voltage, fill factor and power conversion efficiency were found to be 3.2 mA/cm(-2), 337 mV, 37.9 and 0.45%, respectively. The observed performance clearly indicates that the investigated device structure could be a promising candidate for high-performance low-cost new-generation photovoltaic diodes.eninfo:eu-repo/semantics/closedAccessConference Object181510.1063/1.49764712-s2.0-85016012732N/AWOS:000435205100127N/A