Damgaci, ElifKartal, EmreGucluer, FurkanSeyhan, AyseKaplan, Yuksel2024-11-072024-11-0720241996-1944https://doi.org/10.3390/ma17112784https://hdl.handle.net/11480/14252This study examined the impact of temperature optimization on indium tin oxide (ITO) films in monolithic HJT/perovskite tandem solar cells. ITO films were deposited using magnetron sputtering at temperatures ranging from room temperature (25 degrees C) to 250 degrees C. The sputtering target was ITO, with a mass ratio of In2O3 to SnO2 of 90% to 10%. The effects of temperature on the ITO film were analyzed using X-ray diffraction (XRD), spectroscopic ellipsometry, and sheet resistance measurements. Results showed that all ITO films exhibited a polycrystalline morphology, with diffraction peaks corresponding to planes (211), (222), (400), (440), and (622), indicating a cubic bixbyite crystal structure. The light transmittance exceeded 80%, and the sheet resistance was 75.1 Omega/sq for ITO deposited at 200 degrees C. The optical bandgap of deposited ITO films ranged between 3.90 eV and 3.93 eV. Structural and morphological characterization of the perovskite solar cell was performed using XRD and FE-SEM. Tandem solar cell performance was evaluated by analyzing current density-voltage characteristics under simulated sunlight. By optimizing the ITO deposition temperature, the tandem cell achieved a power conversion efficiency (PCE) of 16.74%, resulting in enhanced tandem cell efficiency.eninfo:eu-repo/semantics/openAccessindium tin oxide (ITO)tandem solar cellsilicon heterojunctionperovskitedeposition temperatureArticle171110.3390/ma17112784388940472-s2.0-85195845670Q2WOS:001245804400001N/A