Olğar, Mehmet Ali2024-11-072024-11-0720192564-6605https://doi.org/10.28948/ngumuh.598096https://search.trdizin.gov.tr/tr/yayin/detay/354269https://hdl.handle.net/11480/12637In this study, CZTS thin films were grown by a two-stage method involved sputter deposition of metallic Cu,Zn, and Sn layers to form Cu/Sn/Zn/Cu metallic stacks on glass and sulfurization of the metallic stacks at 540and 580 °C for 1 and 5 min in sulfur vapor atmosphere. The reacted samples at two different sulfurizationtemperatures and sulfurization times were characterized employing XRD, SEM, EDX, Raman spectroscopy,optical spectroscopy, and Van der Pauw methods. The metallic stacks and CZTS thin films showed Cu-rich andZn-poor composition. XRD patterns of the reacted films showed almost pure kesterite CZTS phase except forpresence of very small amount of Cu2-xS phase. Raman spectra of the films verified formation of kesterite phasein the films. SEM images showed that the CZTS540-1 sample had more compact, denser and uniform structure.Optical band gap values were found to be in good agreement with the literature. The CZTS540-1 thin filmshowed the highest carrier concentration and lowest resistivity values amongst the other samples.eninfo:eu-repo/semantics/openAccessNanobilim ve NanoteknolojiMalzeme BilimleriÖzellik ve TestMalzeme BilimleriKaplamalar ve FilmlerFizikokimyaMühendislikKimyaKimyaİnorganik ve NükleerArticle821064107210.28948/ngumuh.598096354269