Akgul, GuvencAkgul, Funda Aksoy2024-11-072024-11-072017978-0-7354-1483-90094-243Xhttps://doi.org/10.1063/1.4976470https://hdl.handle.net/11480/1381532nd International Physics Congress of Turkish-Physical-Society (TPS) -- SEP 06-09, 2016 -- Bodrum, TURKEYIn this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 10(3) +/- 3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.eninfo:eu-repo/semantics/closedAccessConference Object181510.1063/1.49764702-s2.0-85016047444N/AWOS:000435205100126N/A