Bezir, N. CicekEvcin, A.Okcu, H.Kayali, R.Kaleli, M.Aldemir, D. A.2024-11-072024-11-0720170587-42461898-794Xhttps://doi.org/10.12693/APhysPolA.132.638https://hdl.handle.net/11480/138203rd International Conference on Computational and Experimental Science and Engineering (ICCESEN) -- OCT 19-24, 2016 -- Antalya, TURKEYGaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I - V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.eninfo:eu-repo/semantics/openAccessNanoparticlesConference Object132363864110.12693/APhysPolA.132.6382-s2.0-85033404874Q4WOS:000412881200065Q3