Bilgili, Ahmet KursatGuzel, TamerOzer, Metin2024-11-072024-11-0720190021-89791089-7550https://doi.org/10.1063/1.5064637https://hdl.handle.net/11480/15227The effect of the TiO2 interfacial layer on rectifying junction parameters of Ag/TiO2/n-InP/Au Schottky diodes has been investigated using current-voltage (I-V) measurements in the temperature range of 120-420 K with steps of 20 K. The barrier height is found to be 0.19 eV and 0.68 eV from current-voltage characteristics at 120 K and 420 K, respectively. At 120 K and 420 K, the ideality factor is found to be 3.52 and 1.01 for the Ag/TiO2/n-InP/Au Schottky barrier diode, respectively. These results are gained by the thermionic emission theory at room temperature. Values of series resistances gained from the Cheung-Cheung method are compared with results gained from a modified Norde method. These experimental results indicate that series resistance decreases with an increase in temperature. The current-voltage (I-V) measurements showed that the diode with the TiO2 interfacial layer gave a double Gaussian property in the examined temperature range. The Richardson constant is also calculated from a modified Richardson plot and is found to be very compatible with the theoretical value. Interface state density is also examined by using I-V characteristics.eninfo:eu-repo/semantics/closedAccessMetal-Semiconductor InterfacesElectrical CharacteristicsTemperature-DependenceHeight EnhancementInpContactsParametersInhomogeneitiesAu/Sno2/N-SiPerformanceArticle125310.1063/1.50646372-s2.0-85060131299Q2WOS:000456264400037Q2