Oeztas, M.Bedir, M.Kayali, R.Aksoy, F.2019-08-012019-08-0120060957-4522https://dx.doi.org/10.1007/s10854-006-0032-1https://hdl.handle.net/11480/5482InP thin films were prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which were atomized with compressed air as carrier gas. The InP thin films were obtained on glass substrates. Thin layers of InP have been grown at various substrate temperatures in the range of 450-525 degrees C. The structural properties have been determined by using X-ray diffraction (XRD). The changes observed in the structural phases during the film formation in dependence of growth temperatures are reported and discussed. Optical properties, such as transmission and the band gap have been analyzed. An analysis of the deduced spectral absorption of the deposited films revealed an optical direct band gap energy of 1.34-1.52 eV for InP thin films. The InP films produced at a substrate temperature 500 degrees C showed a low electrical resistivity of 8.12 x 10(3) Omega cm, a carrier concentration of 11.2 x 10(21) cm(-3), and a carrier mobility of 51.55 cm(2)/Vs at room temperature.eninfo:eu-repo/semantics/closedAccessArticle171084184510.1007/s10854-006-0032-12-s2.0-33748698632Q2WOS:000240553400009Q2