Susi, TomaKotakoski, JaniKepaptsoglou, DemieMangler, ClemensLovejoy, Tracy C.Krivanek, Ondrej L.Ramasse, Quentin2019-08-012019-08-0120140031-90071079-7114https://dx.doi.org/10.1103/PhysRevLett.113.115501https://hdl.handle.net/11480/4122We demonstrate that 60-keV electron irradiation drives the diffusion of threefold-coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of nondestructive and atomically precise structural modification and detection for two-dimensional materials.eninfo:eu-repo/semantics/openAccessArticle1131110.1103/PhysRevLett.113.115501252599872-s2.0-84925047460Q1WOS:000341914100007Q1