Akgul, Guvenc2019-08-012019-08-0120140250-47070973-7669https://dx.doi.org/10.1007/s12034-014-0623-zhttps://hdl.handle.net/11480/4201Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium L-2,L-3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of L-2,L-3 branching ratio (BR) of titanium was investigated and it was found that BR below 3.5 nm shows a strong dependence on film thickness. Mean electron escape depth (lambda) in titanium, an important parameter for surface applications, was determined to be lambda = 2.6 +/- 0.1 nm using L-2,L-3 resonance intensity variation as a function of film thickness. The average L-3/L-2 white line intensity ratio of titanium was obtained as 0.89 from the ratio of amplitudes of each L-3 and L-2 peaks and 0.66 from the integrated area under each L-3 and L-2 peaks. In addition, a theoretical calculation for pure titanium was presented for comparison with experimental data.eninfo:eu-repo/semantics/closedAccessNEXAFStitaniumbranching ratioelectron escape depththin filmsArticle371414510.1007/s12034-014-0623-z2-s2.0-84899921221Q3WOS:000335718100007Q3