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    CATHODOLUMINESCENCE RESPONSE FROM RARE EARTH DOPED Bi4Ge3O12
    (ELSEVIER SCIENCE BV, 2009) Kibar, R.; Cetin, A.; Tuncer, Y.; Uysal, S.; Townsend, P. D.; Canimoglu, A.; Can, N.; Boulon, G; Dujardin, C; Jurdyc, AM
    Room and low temperature cathodoluminescence (CL) of rare earth doped Bi4Ge3O12 (BGO) has been recorded. Luminescence signals noted in the wavelength range (300 - 800 nm) include intrinsic broad emission bands and signals related to Eu3+, Nd3+, and Tm3+. CL measurements made on Bi4Ge3O12 (BGO) doped with rare earth ions are reported for the temperature range 40 to 300 K with different CL excitation modulation frequencies. Dopant levels used in the present study are 1.1, 0.4, and 0.3 wt% Nd, 0.4 wt% Tm and 3 ppm Eu. All dopant levels exhibited different CL spectra with evidence for lines due to the rare-earth dopants intra-4f transitions. The temperature dependence of the intensity of the emission band is discussed.
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    Radioluminescence Properties of Copper- and Terbium-Implanted Strontium Titanate
    (TAYLOR & FRANCIS INC, 2013) Arslanlar, Y. Tuncer; Kibar, R.; Cetin, A.; Canimoglu, Adil
    In this study, the effects of Cu and Tb implantation on the radioluminescence (RL) properties of unimplanted and Cu- and Tb-implanted SrTiO3 (STO) crystals were investigated. The changes induced by heavy ion implants of the surface clearly modify the initial strong RL signals seen near 400750nm. During heating there are step increases in intensity at the RL spectrum near 60, 40, and 82K for unimplanted and Cu- and Tb-implanted samples, respectively.