Yazar "Kibar, R." seçeneğine göre listele

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    CATHODOLUMINESCENCE RESPONSE FROM RARE EARTH DOPED Bi4Ge3O12
    (ELSEVIER SCIENCE BV, 2009) Kibar, R.; Cetin, A.; Tuncer, Y.; Uysal, S.; Townsend, P. D.; Canimoglu, A.; Can, N.; Boulon, G; Dujardin, C; Jurdyc, AM
    Room and low temperature cathodoluminescence (CL) of rare earth doped Bi4Ge3O12 (BGO) has been recorded. Luminescence signals noted in the wavelength range (300 - 800 nm) include intrinsic broad emission bands and signals related to Eu3+, Nd3+, and Tm3+. CL measurements made on Bi4Ge3O12 (BGO) doped with rare earth ions are reported for the temperature range 40 to 300 K with different CL excitation modulation frequencies. Dopant levels used in the present study are 1.1, 0.4, and 0.3 wt% Nd, 0.4 wt% Tm and 3 ppm Eu. All dopant levels exhibited different CL spectra with evidence for lines due to the rare-earth dopants intra-4f transitions. The temperature dependence of the intensity of the emission band is discussed.
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    Radioluminescence Properties of Copper- and Terbium-Implanted Strontium Titanate
    (TAYLOR & FRANCIS INC, 2013) Arslanlar, Y. Tuncer; Kibar, R.; Cetin, A.; Canimoglu, Adil
    In this study, the effects of Cu and Tb implantation on the radioluminescence (RL) properties of unimplanted and Cu- and Tb-implanted SrTiO3 (STO) crystals were investigated. The changes induced by heavy ion implants of the surface clearly modify the initial strong RL signals seen near 400750nm. During heating there are step increases in intensity at the RL spectrum near 60, 40, and 82K for unimplanted and Cu- and Tb-implanted samples, respectively.
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    Rare Earth Photoluminescence in Bismuth-Germanate Crystals
    (TAYLOR & FRANCIS INC, 2013) Arslanlar, Y. Tuncer; Kotan, Z.; Kibar, R.; Canimoglu, A.; Can, N.
    In the present work, the photoluminescence (PL) spectra of bismuth germanate (BGO) doped with trivalent rare earth element (REE) ions with different doping concentrations (0.03wt% Eu, 0.4wt% Tm, and 1.1wt% Nd) are reported in the temperature range from 10 to 300K using different detectors, namely, photomultiplier tube (PMT), InGaAs (IGA), and Si. The luminescence in the NIR region was also measured at room temperature. Two broad emission bands attributed to undoped BGO were found at circa 1350 and 1800nm, respectively. The broad-band emissions are replaced by narrow-band line emissions defined by the trivalent rare earth dopants. The emission spectra from rare earth ion-doped BGO extend from 500 to 2000nm. Rare earth ions act as the dominant recombination centers and define the emission spectra. This is interpreted as resulting from direct charge transfer from intrinsic defect traps to rare earth recombination centers. The temperature-dependent luminescence of BGO doped with 0.4wt% Tm is also presented.