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    CZTS layers formed under sulfur-limited conditions at above atmospheric pressure
    (Elsevier Ltd, 2019) Olgar M.A.; Bacaksız E.; Tomakin M.; Kucukomeroglu T.; Başol B.M.
    In this study CZTS thin films were grown by a two-stage process that involved sequential sputter deposition of metallic Cu, Zn, and Sn layers on Mo coated glass substrates followed by RTP annealing in a sulfur atmosphere at background gas pressures in the range of 1–2 atm. Sulfurization was carried out in a mini reaction volume that provided a relatively S-limited environment. Reacted films were characterized using XRD, EDX, SEM, photoluminescence and Raman spectroscopy. It was found that, under the S-limited regime provided in these experiments the Cu-S secondary phase formation was most extreme in the sample grown at 1.5 atm, whereas films grown at lower and higher pressures showed much smaller degree of phase separation. Reaction at 2 atm yielded a compound film that was the closest to the initial precursor in terms of its composition. SEM micrographs showed rough morphology and polycrystalline structure that changed with the sulfurization pressure. The optical band gap of the films as determined by photoluminescence was found to be about 1.37 eV. These experiments demonstrated the importance of the sulfurization pressure as well as the size of the reactor internal volume in determining secondary phase formation in two-stage processed CZTS layers. © 2018 Elsevier Ltd
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    Growth of Cu 2 ZnSnS 4 (CZTS) thin films using short sulfurization periods
    (Institute of Physics Publishing, 2019) Olgar M.A.; Tomakin M.; Kucukomeroglu T.; Bacaksiz E.
    In this study CZTS thin films were grown by a two-stage process that involved sequential sputter deposition of metallic Cu, Zn, and Sn layers on Mo coated glass substrates followed by RTP annealing at 530 and 560 °C for various dwell times (1, 60, and 180 s). CZTS thin films obtained by reaction at different sulfurization temperatures and reaction times were characterized employing XRD, Raman spectroscopy, SEM, EDX, and photoluminescence. It was observed that it is possible to obtain Cu-poor and Zn-rich CZTS thin films with short dwell time of reactions. XRD pattern and Raman spectra of the films showed formation of kesterite CZTS structure and some secondary phases such as CuS, SnS, SnS 2 . The full-width-at-half-maximum (FWHM) values extracted from the (112) diffraction peaks of the CZTS thin films showed that extension of the sulfurization time provides better crystalline quality except for the CZTS560-60 thin film. SEM surface microstructure of the films displayed non-uniform, dense, and polycrystalline structure. The optical band gap of the films as determined by photoluminescence was found to be about 1.36-1.38 eV. © 2019 IOP Publishing Ltd.