Photodetector properties of CdSe thin films grown by close space sublimation method

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dc.authoridOLGAR, MEHMET ALI/0000-0002-6359-8316
dc.authoridBasol, Bulent/0000-0002-7691-1113
dc.contributor.authorOlgar, M. Ali
dc.contributor.authorBasol, Bulent M.
dc.contributor.authorPolat, Ismail
dc.contributor.authorTomakin, Murat
dc.contributor.authorKucukomeroglu, Tayfur
dc.contributor.authorBacaksiz, Emin
dc.date.accessioned2024-11-07T13:34:33Z
dc.date.available2024-11-07T13:34:33Z
dc.date.issued2023
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractIn the present study, CdSe thin films were grown by Close Space Sublimation (CSS) method on glass substrates at elevated temperatures. The prepared films were analyzed through several characterization techniques such as XRD, SEM, EDX, optical transmission, and photoluminescence. Films had single phase hexagonal crystal structure without any obvious secondary phase segregation. The preferred orientation was (002). SEM images taken from the surface and cross-section of the layers showed well-defined faceted microstructure with a grain size ranging from 0.5 to 1.0 & mu;m. The chemical composition was stoichiometric. Optical band gap calculated from the optical transmission was determined to be 1.73 eV. Room temperature PL spectra showed a single strong peak located at around 715 nm that can be attributed to free carrier-to-band or band-to-band optical transitions. The performance of photodetector devices constructed using the CSS grown CdSe films showed a wavelength dependent behavior, shorter wavelength light generating higher photocurrent. It was seen also determined that the responsiveness and detectivity values increased with decreasing value of the light wavelength. Switching properties, responsivity and detectivity of the photodetectors were studied. The maximum responsivity was observed at 714 nm. Devices yielded the highest photocurrent at a wavelength of 443 nm.
dc.identifier.doi10.1007/s10854-023-11198-9
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue25
dc.identifier.scopus2-s2.0-85169686623
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s10854-023-11198-9
dc.identifier.urihttps://hdl.handle.net/11480/16052
dc.identifier.volume34
dc.identifier.wosWOS:001060865700001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectAnnealing Evolution
dc.subjectOptical-Properties
dc.titlePhotodetector properties of CdSe thin films grown by close space sublimation method
dc.typeArticle

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