Processing CdS- and CdSe-containing window layers for CdTe solar cells

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dc.authoridBasol, Bulent/0000-0002-7691-1113
dc.authoridKARACA, ABDULLAH/0000-0001-5001-5559
dc.authoridBACAKSIZ, EMIN/0000-0002-0041-273X
dc.contributor.authorCiris, Ali
dc.contributor.authorBasol, Bulent M.
dc.contributor.authorAtasoy, Yavuz
dc.contributor.authorKaraca, Abdullah
dc.contributor.authorTomakin, Murat
dc.contributor.authorKucukomeroglu, Tayfur
dc.contributor.authorBacaksiz, Emin
dc.date.accessioned2024-11-07T13:34:38Z
dc.date.available2024-11-07T13:34:38Z
dc.date.issued2021
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractThe influence of heat treatment steps on the characteristics of (CdS, CdSe) junction partners and on solar cell performance was studied. CdS films were obtained by chemical bath deposition, and CdSe layers were evaporated. Structural and compositional properties of CdS/CdSe bilayer stacks did not change upon heat treatment at 400 degrees C up to 10 min, whereas heat treatment in the presence of CdCl2 for 10 min caused formation of a CdSSe alloy with a bandgap value of about 2.05 eV. Originally, the cubic structure of the stack was also transformed into a hexagonal structure during this treatment. CdSe-CdTe interdiffusion was also studied using CdS/CdSe/CdTe triple layer stacks. CdTe films were deposited using a close-spaced sublimation method. Limited CdSe-CdTe interdiffusion was seen when CdTe was deposited over the as-deposited CdSe layer at 580 degrees C. However, such interdiffusion was not detected for samples where CdTe deposition was carried out on CdS/CdSe stacks pre-annealed in the presence of CdCl2. This suggests that partial crystallization of the CdS/CdSe bilayer stack by CdCl2 reduced such an interaction. Solar cells with CdSe/CdTe, CdS/CdTe and CdS/CdSe/CdTe structures with efficiencies of 8.39%, 10.12% and 11.47% were fabricated using 4.5-5 mu m thick CdTe layers and a final CdCl2 treatment. Quantum efficiency measurements demonstrated the benefit of CdSe-CdTe alloying during the final CdCl2 treatment in improving the short circuit current values.
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [118F140]
dc.description.sponsorshipThis work is financially supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Grant Number 118F140.
dc.identifier.doi10.1088/1361-6463/abe5de
dc.identifier.issn0022-3727
dc.identifier.issn1361-6463
dc.identifier.issue21
dc.identifier.scopus2-s2.0-85103105988
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1088/1361-6463/abe5de
dc.identifier.urihttps://hdl.handle.net/11480/16083
dc.identifier.volume54
dc.identifier.wosWOS:000625844900001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofJournal of Physics D-Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectCdS
dc.subjectCdSe junction partner
dc.subjectCSS
dc.subjectCdCl2 treatment
dc.subjectsolar cell efficiency
dc.subjectEQE response
dc.titleProcessing CdS- and CdSe-containing window layers for CdTe solar cells
dc.typeArticle

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