Low-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor deposition
Küçük Resim Yok
Tarih
2012
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This paper reports the growth of the germanium nanowires (Ge NWs) with a single-step temperature method via vapour-liquid-solid (VLS) mechanism in the low pressure chemical vapour deposition (CVD) reactor at 300, 280 and 260°C. The Ge NWs grown at 300°C tend to have a tapered structure and the sidewalls of the nanowires were observed to be decorated with gold. The tapering was caused by the uncatalysed deposition of Ge via CVD mechanism at the sidewalls of the nanowires and significantly minimised at 260°C which leads to the formation of straight and ultra-thin Ge NWs. The sidewalls of the Ge NWs grown at 260°C were also observed not to be decorated with gold. The Ge NWs grown from 0.1-nm-thick Au at 260°C had diameter as small as ~3 nm which offers an opportunity to fabricate high-performance p-type ballistic Ge NW transistor and to realise nanowire solar cell with higher efficiency. ©The Electrochemical Society.
Açıklama
Dielectric Science and Technology Division of ECS;Electronics and Photonics;Sensor;New Technology Subcommittee;IEEE Electron Device Society (EDS)
5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting -- 6 May 2012 through 10 May 2012 -- Seattle, WA -- 93682
5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting -- 6 May 2012 through 10 May 2012 -- Seattle, WA -- 93682
Anahtar Kelimeler
Kaynak
ECS Transactions
WoS Q Değeri
Scopus Q Değeri
Q4
Cilt
45
Sayı
3
