Enhancement of the response speed of CIGS-based photodetector by Te-doping

Basit Öğe Kaydı
dc.contributor.authorYilmaz, Salih
dc.contributor.authorBasol, Bulent M.
dc.contributor.authorAtasoy, Yavuz
dc.contributor.authorPolat, Ismail
dc.contributor.authorKucukomeroglu, Tayfur
dc.contributor.authorBacaksiz, Emin
dc.date.accessioned2024-11-07T13:32:57Z
dc.date.available2024-11-07T13:32:57Z
dc.date.issued2024
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractCu(In,Ga)Se2 (CIGS) based devices are promising candidates for high performance photodetector applications. The present work investigated the effects of Te-doping on the properties of CIGS layers and studied the performance of photodetectors (PDs) fabricated on these films. The films were vacuum evaporated on glass substrates and their morphological, structural and optical properties were evaluated after an annealing step at 550 degrees C. Morphological data indicated that undoped CIGS films had non-uniform surface features with large grains separated by nanoparticles. Addition of 6.6 % Te improved the morphology and yielded a smoother layer. Further increase in Te concentration showed appreciable reduction in surface feature size and shape. X-ray diffraction patterns showed that increasing the Te amount in CIGS caused a shift in the XRD peaks towards smaller angles pointing to replacement of Se atoms by Te. Peak splitting at higher Te samples suggested a graded structure with Se and Te amounts changing through the thickness of the film. Raman analysis demonstrated formation of CuInGa(Se,Te)2 (CIGST) compound. According to Tauc's approximation, CIGS films with and without Te atoms possessed two energy band gaps of Eg1 and Eg2 that were in the ranges of 1.10-1.28 eV and 1.16-1.36 eV, respectively. Electrical data obtained from photodetector devices showed a responsivity of 4.44x10- 1 A/W and a detectivity of 8.01x107 Jones for Te-free material, while the rise/fall times were measured as 34/148 ms. A much faster response speed of 19/20 ms was reached for devices fabricated on films with 10.2 % Te. This work demonstrated, for the first time, the fabrication low-cost and high-performance metalsemiconductor-metal (MSM) type CIGST-based PDs.
dc.identifier.doi10.1016/j.sna.2024.115691
dc.identifier.issn0924-4247
dc.identifier.issn1873-3069
dc.identifier.scopus2-s2.0-85198055628
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.sna.2024.115691
dc.identifier.urihttps://hdl.handle.net/11480/15707
dc.identifier.volume377
dc.identifier.wosWOS:001271712300001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSensors and Actuators A-Physical
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectCIGS thin films
dc.subjectCIGST
dc.subjectTe-doping
dc.subjectThermal evaporation
dc.subjectResponse time
dc.subjectPhotodetector
dc.titleEnhancement of the response speed of CIGS-based photodetector by Te-doping
dc.typeArticle

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu