Cu(In,Ga)Te 2 film growth by a two-stage technique utilizing rapid thermal processing

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dc.contributor.authorErkan S.
dc.contributor.authorBaşol B.M.
dc.contributor.authorAtasoy Y.
dc.contributor.authorÇiriş A.
dc.contributor.authorYüksel Ö.F.
dc.contributor.authorBacaksiz E.
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2019
dc.departmentNiğde ÖHÜ
dc.description.abstractCu(In,Ga)Te 2 (CIGT) thin films doped with Na were grown using a two-stage technique. During the first stage of the process precursor layers were formed over Mo coated stainless steel foil substrates by electrodeposition of Cu, In and Ga and evaporation of a NaF film as a dopant and Te. During the second stage, the foil/Mo/(Cu, In, Ga)/NaF/Te stacks were reacted by rapid thermal processing. The ramp rate to the reaction temperature of 600 °C was changed between 0.5 and 10 °C s -1 . Resulting compound layers were analyzed to evaluate the effect of the temperature ramp rate on film quality. It was found that a secondary phase of InTe that was detected in films reacted at ramp rates of 0.5-5 °C s -1 was not present for the films reacted at a ramp rate of 10 °C s -1 . Film morphology of the fast ramp rate sample showed improved crystallinity and grain size, which was superior compared to others. Gallium gradation was detected through all the layers irrespective of the temperature ramp rate, surface of the films being more In-rich. © 2019 IOP Publishing Ltd.
dc.identifier.doi10.1088/1361-6641/ab00a6
dc.identifier.issn0268-1242
dc.identifier.issue3
dc.identifier.scopus2-s2.0-85064072865
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://dx.doi.org/10.1088/1361-6641/ab00a6
dc.identifier.urihttps://hdl.handle.net/11480/1512
dc.identifier.volume34
dc.identifier.wosWOS:000458072100001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherInstitute of Physics Publishing
dc.relation.ispartofSemiconductor Science and Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCu(In, Ga) Te 2 (CIGT)
dc.subjectgallium gradient
dc.subjectrapid thermal processing (RTP)
dc.subjectstainless-steel foil
dc.subjecttwo-stage process
dc.titleCu(In,Ga)Te 2 film growth by a two-stage technique utilizing rapid thermal processing
dc.typeArticle

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