Comparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface

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dc.authoridSeyhan, Ayse/0000-0001-8090-1404
dc.authoridOda, Shunri/0000-0002-8009-2077
dc.authoridOnda, Ken/0000-0003-1724-2009
dc.authoridKoshihara, Shinya/0000-0002-7119-2017
dc.authoridFukumoto, Keiki/0000-0002-7742-5862
dc.contributor.authorFukumoto, Keiki
dc.contributor.authorSeyhan, Ayse
dc.contributor.authorOnda, Ken
dc.contributor.authorOda, Shunri
dc.contributor.authorKoshihara, Shin-ya
dc.date.accessioned2024-11-07T13:34:41Z
dc.date.available2024-11-07T13:34:41Z
dc.date.issued2019
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractSemiconductor quantum dots (QDs) have been widely used in various optoelectronic devices. Extensive studies have been devoted to the application of Si QDs with the aim of realizing various optoelectronic functions based on the modified energy band structure in QDs compared with bulk crystals. Therefore, it is necessary to be able to directly probe the carrier dynamics in single Si QDs of nanoscale dimensions deposited on a SiO2/Si surface, where the environment is compatible with Si-based semiconductor devices. This letter reports the observation and comparison of the ultrafast electron dynamics just after the photoexcitation of isolated and clustered Si QDs on a SiO2/Si surface using time-resolved photoemission electron microscopy with spatial and temporal resolutions of 50nm and 100fs, respectively. The detailed structure of QDs was confirmed directly by scanning electron microscopy observations. The results obtained in the present study show that the carrier lifetime in isolated QDs is shorter than that in clustered QDs. This is consistent with the electron-hole interaction in nanospace, significantly modifying the carrier recombination rates. Published under license by AIP Publishing.
dc.description.sponsorshipJST CREST, Japan; JSPS KAKENHI, Japan [JP15K17677, 2903, JP17H06366, JP17H06375]; I4LEC, Japan [2903, JP18H05170]
dc.description.sponsorshipThis work was supported financially by JST CREST, JSPS KAKENHI Grant No. JP15K17677, and JSPS KAKENHI for Scientific Research on Innovative Areas 'Soft Crystals' (Area No. 2903, No. JP17H06366 and JP17H06375) and 'I4LEC' (Area No. 2903, No. JP18H05170), Japan.
dc.identifier.doi10.1063/1.5097611
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issue5
dc.identifier.scopus2-s2.0-85070085695
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/1.5097611
dc.identifier.urihttps://hdl.handle.net/11480/16120
dc.identifier.volume115
dc.identifier.wosWOS:000478913700011
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Inst Physics
dc.relation.ispartofApplied Physics Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectMultiple Exciton Generation
dc.subjectSilicon Nanocrystals
dc.subjectCarrier Multiplication
dc.subjectAuger Recombination
dc.subjectRelaxation Dynamics
dc.subjectPhonon Bottleneck
dc.subjectPorous Silicon
dc.subjectPhotoluminescence
dc.subjectEfficiency
dc.subjectPbse
dc.titleComparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface
dc.typeArticle

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