Phase transformation in Cu2SnS3 (CTS) thin films through pre-treatment in sulfur atmosphere

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dc.authoridBasol, Bulent/0000-0002-7691-1113
dc.authoridOLGAR, MEHMET ALI/0000-0002-6359-8316
dc.contributor.authorOlgar, M. A.
dc.contributor.authorBasol, B. M.
dc.contributor.authorTomakin, M.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2024-11-07T13:34:40Z
dc.date.available2024-11-07T13:34:40Z
dc.date.issued2021
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractIn this study, Cu2SnS3 (CTS) thin films prepared by a two-step sulfurization process were characterized. Cu and Sn metallic layers were first deposited on glass substrates by sputtering and then annealed in-situ while in the sputtering chamber to obtain CuSn (CT) alloys. This was followed by a pre-treatment step at temperatures between 200 and 350 degrees C in presence of S vapors. Finally, a full sulfurization step was performed at 525 degrees C to obtain the desired CTS phase. CTS films were characterized using EDX, XRD, Raman spectroscopy, SEM, optical transmission and Van der Pauw methods. It was found that all CTS samples had Cu-poor chemical composition. XRD data revealed only diffraction peaks belonging to CTS structure after the full sulfurization step. Raman spectra of the samples showed that except for the CTS sample pre-treated at 250 degrees C (CTS-250), which displayed the tetragonal crystal system, the films were dominated by the monoclinic structure. SEM surface images showed dense and polycrystalline microstructure, CTS-200 sample exhibiting a more uniform morphology. Optical band gap values were found to be ranging from 0.92 to 1.19 eV. All samples showed p-type conductivity but the sample pre-treated at 350 degrees C had higher resistivity and lower carrier concentration values. Overall, the CTS layer prepared using the pre-treatment step at 200 degrees C exhibited more promising structural and optical properties for potential photovoltaic applications. This work demonstrated that it is possible to change the crystal structure of sulfurized CTS thin films through a pre-treatment step.
dc.identifier.doi10.1007/s10854-021-05660-9
dc.identifier.endpage10027
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue8
dc.identifier.scopus2-s2.0-85102838593
dc.identifier.scopusqualityQ2
dc.identifier.startpage10018
dc.identifier.urihttps://doi.org/10.1007/s10854-021-05660-9
dc.identifier.urihttps://hdl.handle.net/11480/16108
dc.identifier.volume32
dc.identifier.wosWOS:000629112600009
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectSolar-Cells
dc.subjectOptical-Properties
dc.subjectConversion Efficiency
dc.subjectSulfurization
dc.subjectPerformance
dc.subjectFabrication
dc.subjectGrowth
dc.subjectTemperature
dc.subjectImprovement
dc.subjectRatio
dc.titlePhase transformation in Cu2SnS3 (CTS) thin films through pre-treatment in sulfur atmosphere
dc.typeArticle

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