The choice of Zn or ZnS layer in the stacked precursors for preparation of Cu2ZnSnS4 (CZTS) thin films

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dc.authoridOLGAR, MEHMET ALI/0000-0002-6359-8316
dc.authoridZAN, RECEP/0000-0001-6739-4348
dc.authoridSeyhan, Ayse/0000-0001-8090-1404
dc.contributor.authorOlgar, M. A.
dc.contributor.authorSeyhan, A.
dc.contributor.authorSarp, A. O.
dc.contributor.authorZan, R.
dc.date.accessioned2024-11-07T13:24:39Z
dc.date.available2024-11-07T13:24:39Z
dc.date.issued2020
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractCu2ZnSnS4 (CZTS) thin films are commonly used as an absorber layer in the thin film solar cell structure. In this study, CZTS thin films were produced by sulfurization of stacked precursor films that is prepared by deposition of Cu, Zn, SnS, ZnS films on glass substrate using sputtering method. The sequential sputter deposition was performed to obtain two distinct stacked precursors, Cu/SnS/Zn/Cu and Cu/SnS/ZnS/Cu respectively. Afterwards, annealing process was implemented at various reaction temperatures (500-575 degrees C) for 1 min utilizing rapid thermal processing (RTP). The EDX measurements revealed that all the prepared CZTS samples had Cu-poor and Zn-rich composition that are non-stoichiometric chemical composition. This non-stoichiometric composition is important for high efficient CZTS based solar cells. XRD measurements revealed that all patterns are dominated by diffraction planes of kesterite CZTS. The CuS, Cu2S and SnS2 secondary phases also were detected in the XRD pattern of some CZTS films. Raman spectroscopy measurements verified formation of kesterite CZTS phase for all films and picked out CTS phase for some samples prepared using Cu/SnS/Zn/Cu precursor films. The surface microstructure of the films that were obtained through SEM displayed polycrystalline surface structure. Room temperature PL emission spectra of the films showed broad peak at around 1.37-1.38 eV, which is near to the optical band gap of kesterite CZTS structure. Electrical characterization of the samples demonstrated that B-525 CZTS thin film has more suitable electrical resistivity and carrier concentration values for CZTS based solar cell applications.
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [118F530]
dc.description.sponsorshipThis research was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) with the project number of 118F530. We gratefully acknowledge the help of M. Tomakin for electrical measurements.
dc.identifier.doi10.1016/j.spmi.2020.106669
dc.identifier.issn0749-6036
dc.identifier.scopus2-s2.0-85089354716
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2020.106669
dc.identifier.urihttps://hdl.handle.net/11480/14239
dc.identifier.volume146
dc.identifier.wosWOS:000573813400002
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAcademic Press Ltd- Elsevier Science Ltd
dc.relation.ispartofSuperlattices and Microstructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectCu2ZnSnS4 (CZTS)
dc.subjectSputtering
dc.subjectTwo-stage method
dc.subjectStacking order
dc.subjectSulfurization temperature
dc.titleThe choice of Zn or ZnS layer in the stacked precursors for preparation of Cu2ZnSnS4 (CZTS) thin films
dc.typeArticle

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