Binding energy of the donor impurities in GaAs-Ga1-xAlxAs quantum well wires with Morse potential in the presence of electric and magnetic fields

Küçük Resim Yok

Tarih

2016

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

IOP PUBLISHING LTD

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

The behavior of a donor in the GaAs-Ga1-xAlxAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters (D-e, r(e), and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.

Açıklama

Anahtar Kelimeler

Morse potential, electric field, magnetic field, the donor atom, quantum well wire

Kaynak

CHINESE PHYSICS B

WoS Q Değeri

Q3

Scopus Q Değeri

Q3

Cilt

25

Sayı

10

Künye