Binding energy of the donor impurities in GaAs-Ga1-xAlxAs quantum well wires with Morse potential in the presence of electric and magnetic fields
Küçük Resim Yok
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
IOP PUBLISHING LTD
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The behavior of a donor in the GaAs-Ga1-xAlxAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters (D-e, r(e), and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.
Açıklama
Anahtar Kelimeler
Morse potential, electric field, magnetic field, the donor atom, quantum well wire
Kaynak
CHINESE PHYSICS B
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
25
Sayı
10
