Fabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes

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dc.authorid0000-0002-3881-6625
dc.authorid0000-0003-3667-179X
dc.contributor.authorAkgul, Guvenc
dc.contributor.authorAkgul, Funda Aksoy
dc.contributor.authorMulazimoglu, Emre
dc.contributor.authorUnalan, Husnu Emrah
dc.contributor.authorTuran, Rasit
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2014
dc.departmentNiğde ÖHÜ
dc.description.abstractIn this study, copper oxide (CuO) thin film/silicon (Si) nanowire heterojunctions have been fabricated and their optoelectronic performances have been investigated. Vertically aligned n-type Si nanowires have been fabricated using metal-assisted etching (MAE) technique. CuO thin films were synthesized by the sol-gel method and deposited onto the nanowires through spin-coating. Fabricated nanowire heterojunction devices exhibited excellent diode behaviour compared to the planar heterojunction control device. The rectification ratios were found to be 105 and 101 for nanowire and planar heterojunctions, respectively. The improved electrical properties and photosensitivity of the nanowire heterojunction diode was observed, which was related to the three-dimensional nature of the interface between the Si nanowires and the CuO film. Results obtained in this work reveal the potential of Si nanowire-based heterojunctions for various optoelectronic devices.
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TUBITAK); Turkish Academy of Sciences (TUBA)
dc.description.sponsorshipGA and FAA would like to thank The Scientific and Technical Research Council of Turkey (TUBITAK) Post-Doctoral Fellowship for financial support. HEU acknowledges support from the Distinguished Young Scientists award of the Turkish Academy of Sciences (TUBA). Middle East Technical University (METU) Central Laboratory facilities are also greatly acknowledged.
dc.identifier.doi10.1088/0022-3727/47/6/065106
dc.identifier.issn0022-3727
dc.identifier.issn1361-6463
dc.identifier.issue6
dc.identifier.scopus2-s2.0-84893198104
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://dx.doi.org/10.1088/0022-3727/47/6/065106
dc.identifier.urihttps://hdl.handle.net/11480/4199
dc.identifier.volume47
dc.identifier.wosWOS:000331468100013
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherIOP PUBLISHING LTD
dc.relation.ispartofJOURNAL OF PHYSICS D-APPLIED PHYSICS
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectsilicon nanowires
dc.subjectmetal oxide semiconductors
dc.subjectthin films
dc.subjectphotodiodes
dc.titleFabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes
dc.typeArticle

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