Structural, optical and Schottky diode properties of Cu2ZnSnS4 thin films grown by two-stage method

Küçük Resim Yok

Tarih

2019

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Springer New York LLC

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

CZTS thin film was prepared by a two-stage process comprising sputter deposition of metallic Cu, Zn, and Sn layers followed annealing treatment of the metallic precursors in a sulfur atmosphere at 560 °C for 3 min. The CZTS thin film was investigated in the way of structural, optical and electrical properties. The XRD pattern of Cu-poor and Zn-rich CZTS thin film was dominated by characteristic peaks of kesterite CZTS planes. Raman spectra of the film ensured formation of kesterite CZTS phase and displayed formation of CTS and ZnS phases. Dense and polycrystalline surface features were observed in SEM images of CZTS thin film. Band–band transitions was not observed due to the probable concentration of deep acceptor levels in this material. The diode parameters of Mo/CZTS/Al structure such as ideality factor, barrier height and serial resistance were calculated employing temperature dependent I–V characteristics of Mo/CZTS/Al diode structure. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.

Açıklama

Anahtar Kelimeler

Kaynak

Journal of Materials Science: Materials in Electronics

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

30

Sayı

11

Künye