Structural, optical and Schottky diode properties of Cu2ZnSnS4 thin films grown by two-stage method
Küçük Resim Yok
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer New York LLC
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
CZTS thin film was prepared by a two-stage process comprising sputter deposition of metallic Cu, Zn, and Sn layers followed annealing treatment of the metallic precursors in a sulfur atmosphere at 560 °C for 3 min. The CZTS thin film was investigated in the way of structural, optical and electrical properties. The XRD pattern of Cu-poor and Zn-rich CZTS thin film was dominated by characteristic peaks of kesterite CZTS planes. Raman spectra of the film ensured formation of kesterite CZTS phase and displayed formation of CTS and ZnS phases. Dense and polycrystalline surface features were observed in SEM images of CZTS thin film. Band–band transitions was not observed due to the probable concentration of deep acceptor levels in this material. The diode parameters of Mo/CZTS/Al structure such as ideality factor, barrier height and serial resistance were calculated employing temperature dependent I–V characteristics of Mo/CZTS/Al diode structure. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.
Açıklama
Anahtar Kelimeler
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
30
Sayı
11
