Effect of ultra-thin CdSexTe1-x interface layer on parameters of CdTe solar cells

dc.authoridKARACA, ABDULLAH/0000-0001-5001-5559
dc.authoridBasol, Bulent/0000-0002-7691-1113
dc.contributor.authorCiris, Ali
dc.contributor.authorBasol, Bulent M.
dc.contributor.authorAtasoy, Yavuz
dc.contributor.authorKaraca, Abdullah
dc.contributor.authorTomakin, Murat
dc.contributor.authorKucukomeroglu, Tayfur
dc.contributor.authorBacaksiz, Emin
dc.date.accessioned2024-11-07T13:34:38Z
dc.date.available2024-11-07T13:34:38Z
dc.date.issued2022
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractEffects of an ultra-thin CdSexTe1-x junction interface layer on CdTe solar cell parameters were investigated employing a CdSexTe1-x/CdTe absorber structure. CdSexTe1-x thin films with varying composition were grown by vacuum evaporation and CdTe films were produced by the close spaced sublimation (CSS) method. XRD analysis showed that while the CdSexTe1-x layers with x values less than 0.39 crystallized in cubic structure, films that were richer in Se displayed a (cubic + hexagonal) mixed phase. SEM analysis demonstrated a morphology with compact grains for all films. However, the grain size decreased appreciably with increasing Se content. Optical measurements showed that the band gaps of the alloys reached the minimum value of 1.40 eV at x similar to 0.32. CdS/CdSexTe1-x/CdTe solar cells were fabricated employing 100 nm thick CdSexTe1-x interlayers. The Grazing Incidence (GI)-XRD spectra of CdSexTe1-x used in the device structure showed that these inter-layers had graded alloy composition. The average Se-concentration within the graded alloy films were found to agree with the values obtained by EDS. Conversion efficiencies of 9.59% 11.69% and 10.13%, were obtained for x values of 0.24, 0.32 and 0.39, respectively. Spectral response showed enhanced long wavelength response for all devices due to the presence of the CdSexTe1-x interlayer. It was concluded that using an ultra-thin CdSexTe1-x inter-layer with optimum properties between CdS (junction partner) and CdTe improves the cell performance by increasing the current density of the device.
dc.description.sponsorshipScientific and Techno-logical Research Council of Turkey (TUBITAK) [118F140]
dc.description.sponsorshipThis study was financially supported by the Scientific and Techno-logical Research Council of Turkey (TUBITAK) under Grant Number 118F140.
dc.identifier.doi10.1016/j.solener.2022.01.073
dc.identifier.endpage136
dc.identifier.issn0038-092X
dc.identifier.issn1471-1257
dc.identifier.scopus2-s2.0-85124208182
dc.identifier.scopusqualityQ1
dc.identifier.startpage128
dc.identifier.urihttps://doi.org/10.1016/j.solener.2022.01.073
dc.identifier.urihttps://hdl.handle.net/11480/16085
dc.identifier.volume234
dc.identifier.wosWOS:000754417200006
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofSolar Energy
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectCdSe(x)Te(1-x )thin films
dc.subjectSolar cell efficiency
dc.subjectExternal quantum efficiency
dc.subjectClose space sublimation
dc.subjectVacuum evaporation
dc.subjectGraded alloy
dc.titleEffect of ultra-thin CdSexTe1-x interface layer on parameters of CdTe solar cells
dc.typeArticle

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