Improved diode properties in zinc telluride thin film-silicon nanowire heterojunctions

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dc.authorid0000-0001-8541-5309
dc.authorid0000-0003-3667-179X
dc.contributor.authorAkgul, Funda Aksoy
dc.contributor.authorAkgul, Guvenc
dc.contributor.authorGullu, Hasan Huseyin
dc.contributor.authorUnalan, Husnu Emrah
dc.contributor.authorTuran, Rasit
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2015
dc.departmentNiğde ÖHÜ
dc.description.abstractIn this study, structural and optoelectronic properties and photodedection characteristics of diodes constructed from p-zinc telluride (ZnTe) thin film/n-silicon (Si) nanowire heterojunctions are reported. Dense arrays of vertically aligned Si nanowires were successfully synthesized on (110)-oriented n-type single crystalline Si wafer using simple and inexpensive metal-assisted etching (MAE) process. Following the nanowire synthesis, p-type ZnTe thin films were deposited onto vertically oriented Si nanowires via radio frequency magnetron sputtering to form three-dimensional heterojunctions. A comparative study of the structural results obtained from X-ray diffraction and Raman spectroscopy measurements showed the improved crystallinity of the ZnTe thin films deposited onto the Si nanowire arrays. The fabricated nanowire-based heterojunction devices exhibited remarkable diode characteristics and enhanced optoelectronic properties and photosensitivity in comparison to the planar reference. The electrical measurements revealed that the diodes with nanowires had a well-defined rectifying behaviour with a rectification ratio of 10(4) at +/- 2V and a relatively small ideality factor of n=1.8 with lower reverse leakage current and series resistance at room temperature in dark condition. Moreover, an open-circuit voltage of 100mV was also observed under illumination. Based on spectral photoresponsivity measurements, the nanowire-based device exhibited a distinct responsivity and high detectivity in visible and near-infrared (NIR) wavelength regions. The device characteristics observed here offer that the fabricated ZnTe thin film/Si nanowire-based p-n heterojunction structures will find important applications in future and will be a promising candidate for high-performance and low-cost optoelectronic device applications, NIR photodedectors in particular.
dc.description.sponsorshipScientific & Technical Research Council of Turkey (TUBITAK) [2218]; Distinguished Young Scientists award of the Turkish Academy of Sciences (TUBA)
dc.description.sponsorshipF.A.A. and G.A. would like to give thanks to The Scientific & Technical Research Council of Turkey (TUBITAK) 2218-National Postdoctoral Research Fellowship Programme for financial support. H.E.U. acknowledges supports from the Distinguished Young Scientists award of the Turkish Academy of Sciences (TUBA). Middle East Technical University (METU) Central Laboratory facilities are also greatly acknowledged.
dc.identifier.doi10.1080/14786435.2015.1026296
dc.identifier.endpage1183
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue11
dc.identifier.scopus2-s2.0-84927799700
dc.identifier.scopusqualityQ3
dc.identifier.startpage1164
dc.identifier.urihttps://dx.doi.org/10.1080/14786435.2015.1026296
dc.identifier.urihttps://hdl.handle.net/11480/3951
dc.identifier.volume95
dc.identifier.wosWOS:000352627300003
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherTAYLOR & FRANCIS LTD
dc.relation.ispartofPHILOSOPHICAL MAGAZINE
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectsilicon nanowires
dc.subjectRF magnetron sputtering
dc.subjectheterojunctions
dc.subjectoptoelectronic properties
dc.titleImproved diode properties in zinc telluride thin film-silicon nanowire heterojunctions
dc.typeArticle

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