Improving device performance of sputtered CZTSe based solar cells by Manganese doping
Küçük Resim Yok
Tarih
2024
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Despite many efforts, Cu2ZnSnSe4 (CZTSe) based solar cells have remained relatively low efficiency compared to other thin film-based devices. One of the prevalent strategies used to improve cell performance in CZTSe is cation substitution. In this contribution, the effects of substituting Mn for Zn on CZTSe solar cell performance were systematically examined. Samples with various Mn content were grown by a two-stage method involving high temperature annealing of precursor layers comprising Cu, Zn, Sn, Mn and Se. All of the samples were found to have Cu-poor and (Zn + Mn)-rich or nearly stoichometric compositions. They crystalized in kesterite phase irrespective of the Mn content as confirmed by X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS) measurements. The highest efficiency solar cell (5.56%) was obtained employing the 5% Mn doped CZTSe absorber. This film was found to have improved microstructure and reduced defect density. This is the first report on over 5% efficient kesterite thin film solar cell fabricated on a Cu2Mn0.05Zn0.95SnSe4 absorber layer.
Açıklama
Anahtar Kelimeler
CZTSe thin film, Mn doping, Two -stage technique, Improved solar cell efficiency, CMZTSe layer
Kaynak
Optical Materials
WoS Q Değeri
N/A
Scopus Q Değeri
Q1
Cilt
149
