Optimization of sulfurization time and temperature for fabrication of Cu2ZnSnS4 (CZTS) thin films

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dc.contributor.authorOlgar M.A.
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2019
dc.departmentNiğde ÖHÜ
dc.description.abstractIn this study, growth of CZTS thin films was performed by sputter deposition of metallic precursor layers followed annealing process at different sulfurization temperatures and times. In the first stage of the study, effect of the reaction temperature for 1 s sulfurization time was investigated. XRD pattern of the sample sulfurized at 560 °C showed purer XRD pattern and better crystalline quality. Zn and Sn loss was observed for reacted samples at 540 and 580 °C. SEM images of CZTS560-1 samples revealed purer and molten-like surface structure. Optical band gap values were found 1.45 eV that are not influenced by sulfurization temperature. In the second stage, effect of the sulfurization time for sulfurization temperature at 560 °C was examined with addition of electrical characterization to the previous characterization methods. EDX results demonstrated that Zn-loss took place at higher dwell time of reaction (300 s). XRD data showed that increasing the sulfurization time above 1 s enhances the crystalline quality and contributes to form much purer CZTS structure. Raman spectroscopy confirmed presence of CZTS phase. Optical band gap values (1.45–1.48 eV) and electrical properties of the CZTS thin films were strongly influenced by [Cu]/[Sn] atomic ratio and presence of Cu–S based secondary phase. © 2018 Elsevier Ltd
dc.identifier.doi10.1016/j.spmi.2018.12.012
dc.identifier.endpage41
dc.identifier.issn0749-6036
dc.identifier.scopus2-s2.0-85059332666
dc.identifier.scopusqualityQ2
dc.identifier.startpage32
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2018.12.012
dc.identifier.urihttps://hdl.handle.net/11480/1513
dc.identifier.volume126
dc.identifier.wosWOS:000463848000005
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorOlgar M.A.
dc.language.isoen
dc.publisherAcademic Press
dc.relation.ispartofSuperlattices and Microstructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCu2ZnSnS4 (CZTS)
dc.subjectKesterite
dc.subjectSputtering
dc.subjectSulfurization temperature
dc.subjectSulfurization time
dc.subjectTwo-stage method
dc.titleOptimization of sulfurization time and temperature for fabrication of Cu2ZnSnS4 (CZTS) thin films
dc.typeArticle

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