Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K

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dc.contributor.authorGumus, A.
dc.contributor.authorAltindal, S.
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2014
dc.departmentNiğde ÖHÜ
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEY
dc.description.abstractIn this study. Au/polypyrrole/n-Si metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) was fabricated by using a spin coating system for formation of polypyrrole (PPy) organic layer and a thermal evaporation system for deposition of metal contacts. The forward bias current-voltage-temperature (I-V-T) characteristics of the diode were investigated in the temperature range of 110-360 K. The some main electrical parameters such as the zero-bias barrier height (Phi(bo)), ideality factor (n), and effective barrier height (Phi(bef)) were found as function temperature. The experimental results show that the I-V-T characteristics have a non-linear behavior especially due to the effect of series resistance (R-s) and interfacial polymer layer by resulting a higher n value of 3.09 larger than unity (n > 1). While the value of Phi(bo) increases, n decreases with increasing temperature and such changes in Phi(bo) and n with temperature was attributed to the presence of saddle point or pinch-off at around mean BH value ((Phi(bo)) over bar) at M/S interface. The value of Richardson constant (A*) was obtained from the slope of conventional Richardson plot, ln(I-0/T-2) vs (q/kT) as 1.395 x 10(-8) A/cm(2) K-2 which is much lower than the known theoretical value of 112 A/cm(2) K-2 for n-Si. The (Phi(bo)) over tilde and standard deviation (sigma(o)) were obtained from the intercept and slope of Phi(bo) vs q/kT plot as 1.146 eV and 0.13 V. Thus, the (Phi(bo)) over bar and effective value of A* were obtained as 1.078 eV and 113.03 A/cm(2) K-2 from the modified Richardson plot. The obtained experimental value of A* is in a good agreement with the theoretical value of 112 A/cm(2) K-2 for n-Si. As a result, current transport mechanism (CTM) in MPS type SBD can be successfully explained on the basis of thermionic emission (TE) theory with Gaussian distribution (GD) of barrier heights (BHs) around (Phi(bo)) over bar. (C) 2014 Elsevier Ltd. All rights reserved.
dc.identifier.doi10.1016/j.mssp.2014.05.060
dc.identifier.endpage71
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84911436309
dc.identifier.scopusqualityQ1
dc.identifier.startpage66
dc.identifier.urihttps://dx.doi.org/10.1016/j.mssp.2014.05.060
dc.identifier.urihttps://hdl.handle.net/11480/4098
dc.identifier.volume28
dc.identifier.wosWOS:000345645000012
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherELSEVIER SCI LTD
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAu/PPy/n-Si (MPS) type SBDs
dc.subjectCurrent-transport mechanisms
dc.subjectTemperature dependent
dc.subjectBarrier inhomogeneity
dc.titleCurrent-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K
dc.typeArticle

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