Growth of Cu 2 ZnSnS 4 (CZTS) thin films using short sulfurization periods

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dc.contributor.authorOlgar M.A.
dc.contributor.authorTomakin M.
dc.contributor.authorKucukomeroglu T.
dc.contributor.authorBacaksiz E.
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2019
dc.departmentNiğde ÖHÜ
dc.description.abstractIn this study CZTS thin films were grown by a two-stage process that involved sequential sputter deposition of metallic Cu, Zn, and Sn layers on Mo coated glass substrates followed by RTP annealing at 530 and 560 °C for various dwell times (1, 60, and 180 s). CZTS thin films obtained by reaction at different sulfurization temperatures and reaction times were characterized employing XRD, Raman spectroscopy, SEM, EDX, and photoluminescence. It was observed that it is possible to obtain Cu-poor and Zn-rich CZTS thin films with short dwell time of reactions. XRD pattern and Raman spectra of the films showed formation of kesterite CZTS structure and some secondary phases such as CuS, SnS, SnS 2 . The full-width-at-half-maximum (FWHM) values extracted from the (112) diffraction peaks of the CZTS thin films showed that extension of the sulfurization time provides better crystalline quality except for the CZTS560-60 thin film. SEM surface microstructure of the films displayed non-uniform, dense, and polycrystalline structure. The optical band gap of the films as determined by photoluminescence was found to be about 1.36-1.38 eV. © 2019 IOP Publishing Ltd.
dc.identifier.doi10.1088/2053-1591/aaff78
dc.identifier.issn2053-1591
dc.identifier.issue5
dc.identifier.scopus2-s2.0-85062807314
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://dx.doi.org/10.1088/2053-1591/aaff78
dc.identifier.urihttps://hdl.handle.net/11480/1543
dc.identifier.volume6
dc.identifier.wosWOS:000457544900001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherInstitute of Physics Publishing
dc.relation.ispartofMaterials Research Express
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCu 2 ZnSnS 4 (CZTS)
dc.subjectkesterite
dc.subjectsputtering
dc.subjectsulfurization temperature
dc.subjectsulfurization time
dc.subjecttwo-stage method
dc.titleGrowth of Cu 2 ZnSnS 4 (CZTS) thin films using short sulfurization periods
dc.typeArticle

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