Characterization of Cu(In,Ga)(Te,S)2 thin films grown on stainless steel foil substrates

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dc.authoridBACAKSIZ, EMIN/0000-0002-0041-273X
dc.authoridBasol, Bulent/0000-0002-7691-1113
dc.contributor.authorKaraca, Abdullah
dc.contributor.authorBasol, Bulent M.
dc.contributor.authorOlgar, M. Ali
dc.contributor.authorBuyuklimanli, Temel
dc.contributor.authorTomakin, Murat
dc.contributor.authorKucukomeroglu, Tayfur
dc.contributor.authorBacaksiz, Emin
dc.date.accessioned2024-11-07T13:35:03Z
dc.date.available2024-11-07T13:35:03Z
dc.date.issued2023
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractIn this study, Cu(In,Ga)(Te,S)(2) (CIGTS) thin films with [Ga]/([In] +/- [Ga]) atomic ratios in the ranges of 0.22-0.28 and 0.50-0.67 were fabricated using a two-stage technique. During the first stage of the technique, in one set of samples, Cu, In and Ga layers were deposited by electrodeposition on a Mo coated stainless steel (SS) foil substrate forming a SS/Mo/Cu/In/Ga precursor structure. For another set of samples, a Te layer was also deposited by e-beam evaporation on the SS/Mo/Cu/In/Ga structure forming a SS/Mo/Cu/In/Ga/Te precursor structure. During the second stage, SS/Mo/Cu/In/Ga and SS/Mo/Cu/In/Ga/Te stacks were reacted using rapid thermal annealing (RTA) for 5 min at 600 degrees C with or without presence of S vapors to produce CIGTS series thin films. SS/Mo/Cu/In/Ga stack under S atmosphere yielded CuInGaS2 with a Ga-In gradient across the thickness by RTA process. SS/Mo/Cu/In/Ga/Te stack reacted without S in the reaction atmosphere yielded the CuInGaTe2 compound. When S was present, the same stack with top Te layer yielded only CuInGaS2 compound. When, however, already formed CuInGaTe2 compound layers were heated in S environment at 400 degrees C, some Te could be retained in the films in the form of elemental Te. Gallium and In grading in various reacted films were evaluated by x-ray diffraction, secondary-ion mass spectrometry and EDS. CIGTS films showed highly (112) preferred oriented chalcopyrite phase and with the increase of Ga content, shifts were observed in the XRD peak positions demonstrating Ga inclusion in the lattice. Gibbs free energy calculations were used to explain the preferred reaction of S with metallic constituents when both S and Te were present for reaction.
dc.identifier.doi10.1088/1361-6463/acc40e
dc.identifier.issn0022-3727
dc.identifier.issn1361-6463
dc.identifier.issue19
dc.identifier.scopus2-s2.0-85151520669
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1088/1361-6463/acc40e
dc.identifier.urihttps://hdl.handle.net/11480/16312
dc.identifier.volume56
dc.identifier.wosWOS:000960742400001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofJournal of Physics D-Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241106
dc.subjectCIGS
dc.subjectCIGTS
dc.subjectfoil substrate
dc.subjectRTA
dc.subjectchalcopyrite thin film
dc.subjecttwo stage process
dc.titleCharacterization of Cu(In,Ga)(Te,S)2 thin films grown on stainless steel foil substrates
dc.typeArticle

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