Permanent Boron Doped Graphene with high Homogeneity using Phenylboronic Acid

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dc.authoridAltuntepe, Ali/0000-0002-6366-4125
dc.authoridZAN, RECEP/0000-0001-6739-4348
dc.contributor.authorAltuntepe, A.
dc.contributor.authorZan, R.
dc.date.accessioned2024-11-07T13:24:48Z
dc.date.available2024-11-07T13:24:48Z
dc.date.issued2021
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractIn this paper, we report on boron doped graphene synthesis using phenylboronic acid as a single source of carbon and boron. The growth conditions were established and optimized to improve the opto-electronic properties of a graphene film. The effects of the phenylboronic acid amount and growth time on the synthesis of graphene were investigated under similar growth conditions on polycrystalline copper foil in a three-zone CVD system. Based on Raman and XPS analysis, boron doped graphene was successfully synthesized under the given growth conditions in this study. It was also found that increasing the amount and growth times led to thicker graphene films. However, a single layer region was only found for a film grown using 0.5 gr phenylboronic acid along with 30-minute growth time, which is in contrast with the current literature. Additionally, carbon atoms were found to be substituted by the boron atoms in the honeycomb structure as revealed by the XPS measurements. Substitutional doping enables the doping to be stable for a long time, which is crucial for the doping to be employed in semiconducting technology particularly in optoelectronics. (C) 2020 Elsevier B.V. Allrightsreserved.
dc.description.sponsorshipScientific and Technological Research Council of Turkey [TUBITAK-117M401]
dc.description.sponsorshipThe authors gratefully acknowledge the funding from The Scientific and Technological Research Council of Turkey (TUBITAK-117M401).
dc.identifier.doi10.1016/j.molstruc.2020.129629
dc.identifier.issn0022-2860
dc.identifier.issn1872-8014
dc.identifier.scopus2-s2.0-85096487063
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.molstruc.2020.129629
dc.identifier.urihttps://hdl.handle.net/11480/14329
dc.identifier.volume1230
dc.identifier.wosWOS:000630326000006
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofJournal of Molecular Structure
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectGraphene
dc.subjectoping
dc.subjectBoron
dc.subjectsynthesis
dc.subjectCVD
dc.titlePermanent Boron Doped Graphene with high Homogeneity using Phenylboronic Acid
dc.typeArticle

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