The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs)

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dc.contributor.authorBilkan, Cigdem
dc.contributor.authorGumus, Ahmet
dc.contributor.authorAltmdal, Semsettin
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2015
dc.departmentNiğde ÖHÜ
dc.description.abstractThe frequency and voltage dependence of capacitance voltage (C-V) and conductance-voltage (G/w-V) characteristics of the Cr/p-Si metal semiconductor (MS) Schottky barrier diodes (SBDs) were investigated in the frequency and applied bias voltage ranges of 10 kHz to 5 MHz and (-4 V)-(+4 V), respectively, at room temperature. The effects of series resistance (R-S) and density distribution of interface states (N-SS), both on C-V and G/w-V characteristics were examined in detail. It was found that capacitance and conductance, both, are strong functions of frequency and applied bias voltage. In addition, both a strong negative capacitance (NC) and an anomalous peak behavior were observed in the forward bias C-V plots for each frequency. Contrary to the behavior of capacitance, conductance increased with the increasing applied bias voltage and there happened a rapid increase in conductance in the accumulation region for each frequency. The extra-large NC in SBD is a result of the existence of R-S, N-SS and interfacial layer (native or deposited). In addition, to explain the NC behavior in the forward bias region, we drew the C-I and G/w-I plots for various frequencies at the same bias voltage. The values of C decrease with increasing frequency at forward bias voltages and this decrease in the NC corresponds to an increase in conductance. The values of N-SS were obtained using a Hill-Coleman method for each frequency and it exhibited a peak behavior at about 30 kHz. The voltage dependent profile of R-S was also obtained using a Nicollian and Brews methods. (C) 2015 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipTUBITAK; Scientific Research Projects Unit of Nigde University BAP research project [2012/022]
dc.description.sponsorshipOne of the authors (Cigdem BILKAN) thanks TUBITAK for financial support.r Second of the authors (Ahmet GUMUS) This work is supported by the Scientific Research Projects Unit of Nigde University BAP research project with 2012/022 number.
dc.identifier.doi10.1016/j.mssp.2015.05.044
dc.identifier.endpage491
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84931264993
dc.identifier.scopusqualityQ1
dc.identifier.startpage484
dc.identifier.urihttps://dx.doi.org/10.1016/j.mssp.2015.05.044
dc.identifier.urihttps://hdl.handle.net/11480/3860
dc.identifier.volume39
dc.identifier.wosWOS:000361774100066
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherELSEVIER SCI LTD
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCr/p-Si Schottky barrier diodes (SBDs)
dc.subjectC-V and G/w-V characteristics
dc.subjectNegative capacitance
dc.subjectAnomalous peak
dc.subjectFrequency dependent
dc.titleThe source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs)
dc.typeArticle

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