The effects of lithographic residues and humidity on graphene field effect devices

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dc.contributor.authorKantar, Behiye Boyarbay
dc.contributor.authorOzturk, Muhittin
dc.contributor.authorCetin, Hidayet
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2017
dc.departmentNiğde ÖHÜ
dc.description.abstractRecently, unknown-manner changes in charge neutrality point (CNP) positioning were ascribed to humidity at graphene field effect transistors (GFETs). While the exact means of humidity interacting with hydrophobic graphene remains unknown, this work examines pristine and lithographic-process-applied graphene surfaces with surface enhanced Raman spectra (SERS). SERS analysis shows that the lithographic-process-applied graphene does not have the same properties as those of pristine graphene. Furthermore, this study has experimentally investigated the effect of humidity on the transfer characteristics of GFET and proposed a model to explain the formation of asymmetric IDS-Vbg branches in accordance with the SERS results and humidity responses.
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TUBITAK) [108T930]
dc.description.sponsorshipWe will never forget Asli SIMSEK, who was a master student at our group, and we would like to thank her for valuable contributions. We would like to thank ARGESAN for contribution in fabricating a mask aligner. This work was supported by the Scientific and Technical Research Council of Turkey (TUBITAK) under Grant no. 108T930.
dc.identifier.doi10.1007/s12034-016-1338-0
dc.identifier.endpage245
dc.identifier.issn0250-4707
dc.identifier.issn0973-7669
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85014363531
dc.identifier.scopusqualityQ3
dc.identifier.startpage239
dc.identifier.urihttps://dx.doi.org/10.1007/s12034-016-1338-0
dc.identifier.urihttps://hdl.handle.net/11480/3511
dc.identifier.volume40
dc.identifier.wosWOS:000397003200029
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherINDIAN ACAD SCIENCES
dc.relation.ispartofBULLETIN OF MATERIALS SCIENCE
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectGraphene
dc.subjectSERS
dc.subjectGFET
dc.subjecthumidity
dc.titleThe effects of lithographic residues and humidity on graphene field effect devices
dc.typeArticle

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