Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates
Küçük Resim Yok
Tarih
2017
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Polish Acad Sciences Inst Physics
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I - V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.
Açıklama
3rd International Conference on Computational and Experimental Science and Engineering (ICCESEN) -- OCT 19-24, 2016 -- Antalya, TURKEY
Anahtar Kelimeler
Nanoparticles
Kaynak
Acta Physica Polonica A
WoS Q Değeri
Q3
Scopus Q Değeri
Q4
Cilt
132
Sayı
3
