Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

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dc.authorid0000-0003-3667-179X
dc.contributor.authorAkgul, Guvenc
dc.contributor.authorAkgul, Funda Aksoy
dc.contributor.authorUnalan, Husnu Emrah
dc.contributor.authorTuran, Rasit
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2016
dc.departmentNiğde ÖHÜ
dc.description.abstractIn this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37V, 3.30mAcm(-2), 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.
dc.description.sponsorshipResearch Projects Unit of Nigde University [FEB 2014/25-BAGEP, FEB 2014/26-BAGEP]; Scientific & Technical Research Council of Turkey (TUBITAK)-National Postdoctoral Research Fellowship Programme [2218]
dc.description.sponsorshipG.A. and F.A.A. would like to give thanks to Research Projects Unit of Nigde University (The Project Code: FEB 2014/25-BAGEP and The Project Code: FEB 2014/26-BAGEP) and The Scientific & Technical Research Council of Turkey (TUBITAK) 2218-National Postdoctoral Research Fellowship Programme for the financial support.
dc.identifier.doi10.1080/14786435.2016.1154207
dc.identifier.endpage1109
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue11
dc.identifier.scopus2-s2.0-84961202253
dc.identifier.scopusqualityQ3
dc.identifier.startpage1093
dc.identifier.urihttps://dx.doi.org/10.1080/14786435.2016.1154207
dc.identifier.urihttps://hdl.handle.net/11480/3665
dc.identifier.volume96
dc.identifier.wosWOS:000373946000004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherTAYLOR & FRANCIS LTD
dc.relation.ispartofPHILOSOPHICAL MAGAZINE
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectheterojunction devices
dc.subjectphotovoltaics
dc.subjectthin films
dc.subjectnanowires
dc.subjectNanostructured semiconductors
dc.titlePhotovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes
dc.typeArticle

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