Performance of Si-based solar cell utilizing optimized Al-doped ZnO films as TCO layer

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dc.authoridZAN, RECEP/0000-0001-6739-4348
dc.authoridAltuntepe, Ali/0000-0002-6366-4125
dc.contributor.authorAltuntepe, Ali
dc.contributor.authorErkan, Serkan
dc.contributor.authorHasret, Onur
dc.contributor.authorYagmyrov, Atajan
dc.contributor.authorYazici, Duygu
dc.contributor.authorTomakin, Murat
dc.contributor.authorOlgar, Mehmet Ali
dc.date.accessioned2024-11-07T13:34:16Z
dc.date.available2024-11-07T13:34:16Z
dc.date.issued2023
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractAluminum-doped zinc oxide (AZO) is one of the most popular transparent conducting oxide layers that can be employed in many optoelectronic applications in particular in photovoltaic devices due to being a low-cost and nontoxic material. In this study, we report on the effect of deposition pressure and substrate temperature on the properties of AZO films and solar cell performance by employing the optimized films. This study consists of two stages, the first of which concerns the optimization deposition pressure while the second is the substrate temperature of AZO films by evaluating the structural, optical, and electrical properties of the films. The deposited AZO thin film under 10 mTorr deposition pressure exhibited high optical transmission (89.9%), low electrical resistivity (9.1 x 10(-2) omega.cm), and high carrier concentration (3.74 x 10(19) cm(-3)) among the others. The impact of substrate temperature was then investigated using this deposition pressure at room temperature, 150, 200, and 250 ?. The deposited AZO films at 150 ? temperature were found to possess the highest optical transmission (91.1%), lowest resistivity (9.9 x 10(-4) omega.cm), and highest carrier concentration (1.1 x 10(20) cm(-3)) values. Hence, the 10 mTorr deposition pressure and 150 ? substrate temperature were selected as the optimum growth parameters to obtain AZO films, which were then employed in the cell structure. It was, thus, revealed that utilizing AZO films in silicon-based solar cell using such parameters led to the enhancement in the cell efficiency.
dc.identifier.doi10.1007/s10854-022-09557-z
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85146112690
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s10854-022-09557-z
dc.identifier.urihttps://hdl.handle.net/11480/15882
dc.identifier.volume34
dc.identifier.wosWOS:000912037300003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectZinc-Oxide Films
dc.subjectAzo Thin-Films
dc.subjectSubstrate-Temperature
dc.subjectTransparent
dc.subjectParameters
dc.subjectGrowth
dc.titlePerformance of Si-based solar cell utilizing optimized Al-doped ZnO films as TCO layer
dc.typeArticle

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