Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron-Doped Graphene

Basit Öğe Kaydı
dc.authoridZAN, RECEP/0000-0001-6739-4348
dc.contributor.authorZan, Recep
dc.date.accessioned2024-11-07T13:24:23Z
dc.date.available2024-11-07T13:24:23Z
dc.date.issued2022
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractHerein, the synthesis of a stable and homogeneous boron-doped graphene film using triethylborane as a single source of carbon and boron is reported. The effects of triethylborane amount and growth time on the synthesis of doped graphene are investigated under the same growth conditions on polycrystalline copper foil in a three-zone chemical vapor deposition (CVD) system, which has not thus far been researched in detail. The findings show that boron-doped graphene films are successfully synthesized. The results enable the design of a recipe for thin-film doped graphene grown with optimum optical transmission and sheet resistance via amending TEB molarity and growth time. Such changes suggest that the single-layer graphene film with high homogeneity can be obtained for the film grown using 0.5 m triethylborane along with 10 min growth time as confirmed by Raman mapping and atomic force microscope (AFM) measurements. It is further revealed that increasing the amount of triethylborane and growth times leads to the formation of thicker graphene films. In addition, X-ray photoelectron spectrometer (XPS) measurements indicate that boron atoms get into a honeycomb structure, thanks to substitutional doping. The findings of this study have significant implications for the implementation of boron-doped graphene films in semiconductor-based technology.
dc.description.sponsorshipScientific and Technological Research Council of Turkey [TUBITAK-117M401]
dc.description.sponsorshipThe author gratefully acknowledges the funding from The Scientific and Technological Research Council of Turkey (TuBTAK-117M401).
dc.identifier.doi10.1002/pssa.202100540
dc.identifier.issn1862-6300
dc.identifier.issn1862-6319
dc.identifier.issue3
dc.identifier.scopus2-s2.0-85121553773
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1002/pssa.202100540
dc.identifier.urihttps://hdl.handle.net/11480/14068
dc.identifier.volume219
dc.identifier.wosWOS:000733171500001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWiley-V C H Verlag Gmbh
dc.relation.ispartofPhysica Status Solidi A-Applications and Materials Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectboron
dc.subjectchemical vapor deposition
dc.subjectdoping
dc.subjectgraphene
dc.subjectgrowth
dc.subjectRaman spectroscopy
dc.subjecttriethylborane
dc.titleTriethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron-Doped Graphene
dc.typeArticle

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu