Effect of CdS and CdSe pre-treatment on interdiffusion with CdTe in CdS/CdTe and CdSe/CdTe heterostructures

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dc.authoridKARACA, ABDULLAH/0000-0001-5001-5559
dc.authoridKUCUKOMEROGLU, TAYFUR/0000-0003-4121-9343
dc.authoridBasol, Bulent/0000-0002-7691-1113
dc.contributor.authorCiris, Ali
dc.contributor.authorBasol, Bulent M.
dc.contributor.authorAtasoy, Yavuz
dc.contributor.authorKucukomeroglu, Tayfur
dc.contributor.authorKaraca, Abdullah
dc.contributor.authorTomakin, Murat
dc.contributor.authorBacaksiz, Emin
dc.date.accessioned2024-11-07T13:34:41Z
dc.date.available2024-11-07T13:34:41Z
dc.date.issued2021
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractHigh efficiency CdTe solar cell structure has the configuration of CdS/CdSe/CdTe. Depending on the deposition and post deposition techniques employed, this stack is often subjected to high temperatures, often in presence of CdCl2, which leads to various degrees of interdiffusion at the CdS/CdSe and CdSe/CdTe interfaces. Such interdiffusion greatly influences device performance. Therefore, understanding and controlling these interdiffusion processes are important. In this contribution, interdiffusion between CdS-CdTe and CdSe-CdTe pairs were studied using CdS/CdTe and CdSe/CdTe stacks annealed at 673 K. Effect of pre-treating the CdS and CdSe layers with CdCl2 before the CdTe deposition on this interdiffusion was investigated. CdS films were grown by CBD and CdSe and CdTe films were vacuum evaporated. CdTe thickness was intentionally kept at the low 150?200 nm range to more easily identify alloy phases formed. GA-XRD measurements demonstrated that in absence of any CdCl2 pretreatment, there was more interdiffusion between CdSe and CdTe compared to CdS and CdTe. In all cases CdCl2 pre-treatment of CdS or CdSe before the deposition of the CdTe film was found to reduce diffusion of S and Se into CdTe.
dc.description.sponsorshipScientific and Technological Research Council of Turkey [118F140]
dc.description.sponsorshipThis work is financially supported by the Scientific and Technological Research Council of Turkey with the project number of 118F140.
dc.identifier.doi10.1016/j.mssp.2021.105750
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85100725962
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2021.105750
dc.identifier.urihttps://hdl.handle.net/11480/16117
dc.identifier.volume128
dc.identifier.wosWOS:000638261100001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectCdTe
dc.subjectVacuum evaporation
dc.subjectInterdiffusion
dc.subjectGA-XRD
dc.titleEffect of CdS and CdSe pre-treatment on interdiffusion with CdTe in CdS/CdTe and CdSe/CdTe heterostructures
dc.typeArticle

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