Effect of deposition conditions on the InP thin films prepared by spray pyrolysis method

Küçük Resim Yok

Tarih

2006

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

SPRINGER

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

InP thin films were prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which were atomized with compressed air as carrier gas. The InP thin films were obtained on glass substrates. Thin layers of InP have been grown at various substrate temperatures in the range of 450-525 degrees C. The structural properties have been determined by using X-ray diffraction (XRD). The changes observed in the structural phases during the film formation in dependence of growth temperatures are reported and discussed. Optical properties, such as transmission and the band gap have been analyzed. An analysis of the deduced spectral absorption of the deposited films revealed an optical direct band gap energy of 1.34-1.52 eV for InP thin films. The InP films produced at a substrate temperature 500 degrees C showed a low electrical resistivity of 8.12 x 10(3) Omega cm, a carrier concentration of 11.2 x 10(21) cm(-3), and a carrier mobility of 51.55 cm(2)/Vs at room temperature.

Açıklama

Anahtar Kelimeler

Kaynak

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

17

Sayı

10

Künye