Effect of annealing temperature on the microstructural and optical properties of newly developed (Ag,Cu)2Zn(Sn,Ge)Se4 thin films

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dc.contributor.authorAtasoy, Yavuz
dc.date.accessioned2024-11-07T13:24:38Z
dc.date.available2024-11-07T13:24:38Z
dc.date.issued2022
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractIn this study, ACZTGSe thin films were fabricated by two-stage method to understand the effect of Ag and Ge incorporation in CZTSe system for the first time. For this purpose, sputtered (Ag-Cu-Zn-Sn-Ge)/evaporated (Se) precursor stacks were selenized at elevated temperatures (500-600 degrees C) for 3 min in rapid thermal processing system. The atomic ratios of the samples were adjusted to Ag/(Ag + Cu) = 0.10 and Ge/(Ge + Sn) = 0.05 and 0.30. The chemical composition of the films changed with the reaction temperature and by the degree of Ag-Ge co-doping. Moreover, Ge loss was more pronounced than Sn loss in the films due to the vapor pressure differences. Kesterite pure phase were acquired for CZTSe and ACZTGSe thin films after annealing treatment applied at 550 degrees C. Both XRD and Raman results revealed that Ag and Ge co-doped CZTSe thin films were successfully prepared. According to cross-sectional and surface images of the samples, it was deduced that incorporation of Ag and Ge into CZTSe lead to grain growth due to the liquid-assisted growth mechanism which was triggered by either Ag or Ge-based phases which acted as a fluxing agent. The band gap values shifted from 1.04 eV (CZTSe) to 1.14 eV (ACZTG(0.23)Se) for the thin films grown at 550 degrees C.
dc.description.sponsorshipScientific and Technological Research Council of Turkey [120F029]
dc.description.sponsorshipThis study is financially supported by the Scientific and Technological Research Council of Turkey with the project number of 120F029. The author gratefully acknowledges to Karadeniz Technical University, Department of Physics for technical support and also thanks to Dr. Bulent M. BASOL for his valuable comments and suggestions.
dc.identifier.doi10.1007/s00339-022-06188-3
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue11
dc.identifier.scopus2-s2.0-85141214812
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s00339-022-06188-3
dc.identifier.urihttps://hdl.handle.net/11480/14229
dc.identifier.volume128
dc.identifier.wosWOS:000879040800002
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subject(Ag
dc.subjectCu)(2)Zn(Sn
dc.subjectGe)Se-4 thin film
dc.subjectAg and Ge co-doping
dc.subjectAnnealing temperature
dc.subjectSputtering
dc.subjectFluxing agents
dc.titleEffect of annealing temperature on the microstructural and optical properties of newly developed (Ag,Cu)2Zn(Sn,Ge)Se4 thin films
dc.typeArticle

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