Impact of sulfurization parameters on properties of CZTS thin films grown using quaternary target
Küçük Resim Yok
Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, CZTS thin films were grown by annealing of sputtered films using quaternary single target employing various annealing parameters. The effects of the post-sulfurization treatment, reaction temperature (500, 525, 550 and 575 degrees C) and sulfurization time (60, 90, 120 and 150 s) on the properties of CZTS thin films were analyzed. The optimization of reaction temperature for 60 s dwell time was examined by annealing the precursor films with/without sulfur atmosphere. It was shown that annealing of the films under the sulfur atmosphere prevents Zn-loss in the samples for higher annealing temperatures (550 and 575 degrees C) and hindering the formation of secondary phases such as Cu2-xS, Cu2SnS3(CTS). The FWHM values of the sulfurized samples revealed that the sulfurization temperature of 550 degrees C is preferable for the fabrication of CZTS samples. Further optimization was performed at 550 degrees C for various sulfurization times. It was seen that all the samples have Cu-poor and Zn-rich composition. The XRD pattern of CZTS samples displayed formation of kesterite CZTS phase but SnS(2)phase formations were also observed for longer sulfurization time (> 120 s). It was also observed that the sulfurization time has more significant contribution on the crystallite size of the samples with respect to sulfurization temperature. The Raman spectra of the CZTS samples confirmed the formation of kesterite structures for all the films and appearance of secondary phase for films prepared using longer sulfurization time (> 120 s). All the samples displayed a dense and polycrystalline surface morphology, but the sulfurized sample for 120 s displayed more homogenous and prominent morphology. The room temperature PL measurements demonstrated a broad band which peaked at about 1.36-1.37 eV, which is very close to the band gap of kesterite CZTS structure. The electrical characterization of the samples showed that all the samples have p-type conductivity and the CZTS-S-550-120 sample has a more promising result considering both resistivity and carrier concentration.
Açıklama
Anahtar Kelimeler
Solar-Cell, Optical-Properties, Cu2znsns4, Temperature, Fabrication, Deposition, Layer, Efficiency, Interface, Sulfur
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
31
Sayı
22
