Silicon-Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
Küçük Resim Yok
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
AMER PHYSICAL SOC
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
We demonstrate that 60-keV electron irradiation drives the diffusion of threefold-coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of nondestructive and atomically precise structural modification and detection for two-dimensional materials.
Açıklama
Anahtar Kelimeler
Kaynak
PHYSICAL REVIEW LETTERS
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
113
Sayı
11
