Substitutional boron doping of graphene using diborane in CVD

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dc.authoridZAN, RECEP/0000-0001-6739-4348
dc.authoridAltuntepe, Ali/0000-0002-6366-4125
dc.contributor.authorZan, Recep
dc.contributor.authorAltuntepe, Ali
dc.contributor.authorErkan, Serkan
dc.date.accessioned2024-11-07T13:24:46Z
dc.date.available2024-11-07T13:24:46Z
dc.date.issued2021
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractThis paper reports on a few layer boron doped graphene with high homogeneity, stability and size. To achieve this, we employed diborane to synthesize a boron doped graphene film in a CVD system. During synthesis, we investigated the effect of diborane flow and growth time on copper foil to optimize doped graphene growth conditions. Raman spectroscopy, XPS, EDXS and ellipsometer were employed for the characterization of the doped graphene films. The results of our study enabled the design of a recipe for thin film boron doped graphene growth with optimum optical transmission values. We further found that increasing the flow of diborane from 10 to 30 sccm and growth times from 10 to 30 min leads to the formation of thicker graphene films. However, we discovered that a few layer graphene film with high homogeneity could be obtained for the film that was grown using 10 sccm diborane along with 30-min growth time. The doping was confirmed by observing the shift in the Raman spectra peaks and XPS measurements in comparison to single layer pristine graphene. The study also revealed that boron atoms substituted carbon atoms in the honeycomb structure as confirmed by XPS measurements, which also provide the doping rate to be 2.4%. Our study has significant implications regarding substitutional doping which enables the doping to be stable for a long time, and this is crucial for the doped graphene to be employed in semiconducting technology particularly in optoelectronics.
dc.description.sponsorshipScientific and Technological Research Council of Turkey [TUB.ITAK-117M401]
dc.description.sponsorshipThe authors gratefully acknowledge the funding from The Scientific and Technological Research Council of Turkey (TUB.ITAK-117M401).
dc.identifier.doi10.1016/j.physe.2021.114629
dc.identifier.issn1386-9477
dc.identifier.issn1873-1759
dc.identifier.scopus2-s2.0-85099320649
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physe.2021.114629
dc.identifier.urihttps://hdl.handle.net/11480/14310
dc.identifier.volume128
dc.identifier.wosWOS:000618051800001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica E-Low-Dimensional Systems & Nanostructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectGraphene
dc.subjectDoping
dc.subjectBoron
dc.subjectDiborane
dc.subjectCVD
dc.subjectGrowth
dc.subjectRaman spectroscopy
dc.titleSubstitutional boron doping of graphene using diborane in CVD
dc.typeArticle

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