Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage

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dc.contributor.authorYucedag, Ibrahim
dc.contributor.authorErsoz, Gulcin
dc.contributor.authorGumus, Ahmet
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2015
dc.departmentNiğde ÖHÜ
dc.description.abstractAu/PPy/n-Si Schottky barrier diodes (SBDs) were fabricated by forming polypyrrole (PPy) organic layer on n-Si using the spin coating technique. Frequency-dependent dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), real and imaginary parts of electrical modulus (M' and M '') and AC electrical conductivity (sigma(ac)) parameters of the structure were investigated in the frequency range of 10-500 kHz. It was found that the values of the epsilon', epsilon '' and tan delta, in general, decrease with increasing frequency while an increase is observed in sigma(ac), M' and M ''. The tan delta and M '' also exhibit a peak at about zero-bias voltage, while peak intensity weakens with increasing frequency. The values of epsilon' and M' decrease with increasing voltage while an increase is observed in epsilon '', tan delta sigma(ac) and M ''. These changes in epsilon', epsilon '', tan delta, M', M '' and sigma(ac) values was attributed to surface charge polarization and the particular density distribution of surface states localized at PPy/n-Si interface.
dc.description.sponsorshipDuzce University BAP research Project [2013.07.02.204]; Nigde University BAP research Project [2012/022]
dc.description.sponsorshipThis work is supported by Duzce University BAP research Project No. 2013.07.02.204 and Nigde University BAP research Project No. 2012/022.
dc.identifier.doi10.1142/S0217979215500757
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.issue13
dc.identifier.scopus2-s2.0-84929654390
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://dx.doi.org/10.1142/S0217979215500757
dc.identifier.urihttps://hdl.handle.net/11480/3938
dc.identifier.volume29
dc.identifier.wosWOS:000354761800001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherWORLD SCIENTIFIC PUBL CO PTE LTD
dc.relation.ispartofINTERNATIONAL JOURNAL OF MODERN PHYSICS B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectDielectric properties
dc.subjectSchottky barrier diode (SBD)
dc.subjectfrequency and voltage dependence
dc.subjectpolypyrrole (PPy)
dc.subjectAC electrical conductivity
dc.subjectelectrical modulus
dc.titleDielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage
dc.typeArticle

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