Yazar "Atasoy Y." seçeneğine göre listele

Listeleniyor 1 - 2 / 2
  • Küçük Resim Yok
    Öğe
    Cu(In,Ga)Te 2 film growth by a two-stage technique utilizing rapid thermal processing
    (Institute of Physics Publishing, 2019) Erkan S.; Başol B.M.; Atasoy Y.; Çiriş A.; Yüksel Ö.F.; Bacaksiz E.
    Cu(In,Ga)Te 2 (CIGT) thin films doped with Na were grown using a two-stage technique. During the first stage of the process precursor layers were formed over Mo coated stainless steel foil substrates by electrodeposition of Cu, In and Ga and evaporation of a NaF film as a dopant and Te. During the second stage, the foil/Mo/(Cu, In, Ga)/NaF/Te stacks were reacted by rapid thermal processing. The ramp rate to the reaction temperature of 600 °C was changed between 0.5 and 10 °C s -1 . Resulting compound layers were analyzed to evaluate the effect of the temperature ramp rate on film quality. It was found that a secondary phase of InTe that was detected in films reacted at ramp rates of 0.5-5 °C s -1 was not present for the films reacted at a ramp rate of 10 °C s -1 . Film morphology of the fast ramp rate sample showed improved crystallinity and grain size, which was superior compared to others. Gallium gradation was detected through all the layers irrespective of the temperature ramp rate, surface of the films being more In-rich. © 2019 IOP Publishing Ltd.
  • Küçük Resim Yok
    Öğe
    Structural, optical and Schottky diode properties of Cu2ZnSnS4 thin films grown by two-stage method
    (Springer New York LLC, 2019) Atasoy Y.; Olgar M.A.; Bacaksiz E.
    CZTS thin film was prepared by a two-stage process comprising sputter deposition of metallic Cu, Zn, and Sn layers followed annealing treatment of the metallic precursors in a sulfur atmosphere at 560 °C for 3 min. The CZTS thin film was investigated in the way of structural, optical and electrical properties. The XRD pattern of Cu-poor and Zn-rich CZTS thin film was dominated by characteristic peaks of kesterite CZTS planes. Raman spectra of the film ensured formation of kesterite CZTS phase and displayed formation of CTS and ZnS phases. Dense and polycrystalline surface features were observed in SEM images of CZTS thin film. Band–band transitions was not observed due to the probable concentration of deep acceptor levels in this material. The diode parameters of Mo/CZTS/Al structure such as ideality factor, barrier height and serial resistance were calculated employing temperature dependent I–V characteristics of Mo/CZTS/Al diode structure. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.