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    Effect of deposition conditions on the InP thin films prepared by spray pyrolysis method
    (SPRINGER, 2006) Oeztas, M.; Bedir, M.; Kayali, R.; Aksoy, F.
    InP thin films were prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which were atomized with compressed air as carrier gas. The InP thin films were obtained on glass substrates. Thin layers of InP have been grown at various substrate temperatures in the range of 450-525 degrees C. The structural properties have been determined by using X-ray diffraction (XRD). The changes observed in the structural phases during the film formation in dependence of growth temperatures are reported and discussed. Optical properties, such as transmission and the band gap have been analyzed. An analysis of the deduced spectral absorption of the deposited films revealed an optical direct band gap energy of 1.34-1.52 eV for InP thin films. The InP films produced at a substrate temperature 500 degrees C showed a low electrical resistivity of 8.12 x 10(3) Omega cm, a carrier concentration of 11.2 x 10(21) cm(-3), and a carrier mobility of 51.55 cm(2)/Vs at room temperature.
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    Influence of the annealing conditions on the properties of InP thin films
    (ELSEVIER SCIENCE SA, 2006) Oztas, M.; Bedir, M.; Kayali, R.; Aksoy, F.
    InP thin films were prepared on glass substrates by the spray pyrolysis technique. Results on structural, optical and electrical properties of the layers as a function of the thermal annealing are reported. XRD data indicates that samples show microstructural perfection improvement as a function of annealing time. The optical band-gap shows a dependence with the inverse of the squared crystallite size, suggesting that electron confinement has some effect. The lattice parameter and band-gap energy (BGE) of the samples annealed at 450 degrees C for 160 min (20-40-80-120-160-200) correspond to the reported values of InP thin films. In addition, the electrical resistivity measurement shows a slight decrease when annealing time is increased up to 80 min but it saturates annealing times between 80 and 160 min. Then it is slightly increased for larger times. (c) 2006 Elsevier B.V All rights reserved.