Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping
Küçük Resim Yok
Tarih
2015
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
AMER CHEMICAL SOC
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations is used to describe the electronic structure modifications incurred by free-standing graphene through two types of single-atom doping. The N K and C K electron energy loss transitions show the presence of pi* bonding states, which are highly localized around the N dopant. In contrast, the B K transition of a single B dopant atom shows an unusual broad asymmetric peak which is the result of delocalized pi* states away from the B dopant. The asymmetry of the B K toward higher energies is attributed to highly localized sigma* antibonding states. These experimental observations are then interpreted as direct fingerprints of the expected p- and n-type behavior of graphene doped in this fashion, through careful comparison with density functional theory calculations.
Açıklama
Anahtar Kelimeler
graphene, doping, electronic structure, STEM, EELS, ab initio calculations, DFT
Kaynak
ACS NANO
WoS Q Değeri
Q1
Scopus Q Değeri
Cilt
9
Sayı
11
