Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

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dc.authorid0000-0001-6739-4348
dc.authorid0000-0003-4235-6462
dc.authorid0000-0001-7466-2283
dc.contributor.authorKepaptsoglou, Demie
dc.contributor.authorHardcastle, Trevor P.
dc.contributor.authorSeabourne, Che R.
dc.contributor.authorBangert, Ursel
dc.contributor.authorZan, Recep
dc.contributor.authorAmani, Julian Alexander
dc.contributor.authorRamasse, Quentin M.
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2015
dc.departmentNiğde ÖHÜ
dc.description.abstractA combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations is used to describe the electronic structure modifications incurred by free-standing graphene through two types of single-atom doping. The N K and C K electron energy loss transitions show the presence of pi* bonding states, which are highly localized around the N dopant. In contrast, the B K transition of a single B dopant atom shows an unusual broad asymmetric peak which is the result of delocalized pi* states away from the B dopant. The asymmetry of the B K toward higher energies is attributed to highly localized sigma* antibonding states. These experimental observations are then interpreted as direct fingerprints of the expected p- and n-type behavior of graphene doped in this fashion, through careful comparison with density functional theory calculations.
dc.description.sponsorshipEngineering and Physical Sciences Research Council (EPSRC); Engineering and Physical Sciences Research Council [EP/I008144/1]
dc.description.sponsorshipSuperSTEM is the U.K. National Facility for Aberration-Corrected STEM, supported by the Engineering and Physical Sciences Research Council (EPSRC). T.P.H. would like to thank the EPSRC for the Doctoral Prize Fellowship which funded this research in part. Computational work was undertaken using the advanced research computing (ARC1 and ARC2) HPC facilities at The University of Leeds, which provided access to Accelrys Materials Studio.
dc.identifier.doi10.1021/acsnano.5b05305
dc.identifier.endpage11407
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.issue11
dc.identifier.pmid26446310
dc.identifier.startpage11398
dc.identifier.urihttps://dx.doi.org/10.1021/acsnano.5b05305
dc.identifier.urihttps://hdl.handle.net/11480/3853
dc.identifier.volume9
dc.identifier.wosWOS:000365464800090
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakPubMed
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherAMER CHEMICAL SOC
dc.relation.ispartofACS NANO
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectgraphene
dc.subjectdoping
dc.subjectelectronic structure
dc.subjectSTEM
dc.subjectEELS
dc.subjectab initio calculations
dc.subjectDFT
dc.titleElectronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping
dc.typeArticle

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