Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by CurrentVoltage Measurements in A Wide Temperature Range

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dc.contributor.authorGüzel, Tamer
dc.date.accessioned2024-11-07T13:16:09Z
dc.date.available2024-11-07T13:16:09Z
dc.date.issued2021
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractIn this paper, the 6H-SiC/MEH-PPV/Al Schottky diode with polymer interface was fabricated and characterized using current-voltage data in the temperature range 80-400 K. Important parameters of the fabricated diode such as ideality factor, barrier height was calculated from current-voltage measurements. The saturation current also was determined from the plots obtained from experimental results. In addition, the series resistance of the diode was calculated by using Cheung and Norde methods. On the other hand, the calculated diode characteristics were discussed by comparing with the each other and literature. Strong dependence of the calculated characteristics on temperature has been determined.
dc.identifier.doi10.18185/erzifbed.870828
dc.identifier.endpage92
dc.identifier.issn1307-9085
dc.identifier.issn2149-4584
dc.identifier.issue1
dc.identifier.startpage79
dc.identifier.trdizinid478821
dc.identifier.urihttps://doi.org/10.18185/erzifbed.870828
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/478821
dc.identifier.urihttps://hdl.handle.net/11480/12093
dc.identifier.volume14
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.relation.ispartofErzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241107
dc.subjectMühendislik
dc.subjectElektrik ve Elektronik
dc.subjectMühendislik
dc.subjectKimya
dc.titleElectrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by CurrentVoltage Measurements in A Wide Temperature Range
dc.typeArticle

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