Fabrication and Characterization of Ga-doped ZnO / Si Heterojunction Nanodiodes
Küçük Resim Yok
Tarih
2017
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Inst Physics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 10(3) +/- 3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.
Açıklama
32nd International Physics Congress of Turkish-Physical-Society (TPS) -- SEP 06-09, 2016 -- Bodrum, TURKEY
Anahtar Kelimeler
Kaynak
Proceedings of the Turkish Physical Society 32nd International Physics Congress (Tps32)
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
1815
